2009 | ||
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2008 | ||
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D. Lorenzen: Heat dissipation module DE 10 2008 049 084 A1; WO 2010 015 352 A2 | ||
D. Lorenzen, M. Schröder: Heat dissipation module having a semiconductor element and production method for such a heat dissipation module DE 10 2008 036 439 A1; WO 2010 015 352 A2 | ||
J. Wolf, D. Lorenzen: Device for detection of power of light of at least one light beam, especially of a laser beam, and laser module with such a device DE 10 2008 035 829 A1 | ||
M. Schröder, U. Röllig, D. Lorenzen: Heat transfer device comprising a semiconductor component and connecting device for the operation thereof DE 10 2008 027 468 A1; WO 2009 146 695 A2 | ||
D. Lorenzen: Apparatus with a semiconductor component-array and a cooling element DE 10 2009 024 310 A1; WO 2010 020 202 A2 | ||
D. Lorenzen: Cooling element for an electronic component and apparatus comprising an electronic component DE 10 2008 026 856 A1; WO 2009 146 694 A2 | ||
M. Schröder, D. Lorenzen: Heat transfer device having at least one semiconductor element, particularly a laser or light-emitting diode element, and method for the assembly thereof DE 10 2008 026 801 A1; WO 2009 146 683 A2 | ||
M. Schröder, D. Lorenzen: Heat transfer device for double-sided cooling of a semiconductor component DE 10 2008 026 229 A1; WO 2009 143 835 A2 | ||
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2007 | ||
D. Lorenzen, T. Schubert, E. Neubauer: Method for the production of a composite material, composite material, and composite material product DE 10 2007 051 570 A1; WO 2009 048 799 A1 | ||
D. Lorenzen: Cooling device for semiconductor elements, semiconductor cooling arrangement and method for producing the same DE 10 2007 051 796 A1; WO 2009 052 814 A2 | ||
D. Lorenzen: Corrosion-resistant microchannel heat sink and semiconductor cooling device comprising said microchannel heat sink DE 10 2007 051 797 B3; WO 2009 052 817 A2 | ||
D. Lorenzen: Microchannel heat sink for cooling semiconductor elements and method for treating the surfaces thereof DE 10 2007 051 798 B3; WO 2009 052 815 A2 | ||
D. Lorenzen: Substrate for semiconductor elements DE 10 2007 051 800 A1; WO 2009 052 816 A2 | ||
P. Hennig, M. Schröder, D. Lorenzen: Laser diode bars electrically series-connected on a metal cooling body WO 2009 048 799 A1 | ||
D. Lorenzen: Method for producing at least one radiation source WO 2009 036 919 A1 | ||
P. Hennig, S. Beyertt, U. Röllig, D. Lorenzen: Stackable multilayered microchannel heat sink with electrically-insulating intermediate layers WO 2008 122 281 A1 | ||
2006 | ||
D. Lorenzen, P. Hennig, M. Schröder, U. Röllig: Carrier for a vertical arrangement of laser diodes with a stop WO 2007 082 508 A1 | ||
2004 | ||
H. G. Hänsel, P. Hennig, G. Bonati, D. Lorenzen: Diode laser module and method for the production thereof DE 10 2004 057 454 B4; US 7,483,456 B2 | ||
D. Lorenzen: Diode laser subelement and arrangements with such diode laser subelement (CTE-matched heat spreading multi-layer substrate) DE 103 61 899 B4; US 7,369,589 B2 | ||
W.-J. Denner, J. Wolf, D. Lorenzen: Capillary evaporator and cooling system DE 103 01 873 B4 | ||
2002 | P. Hennig, G. Bonati, U. Röllig, D. Lorenzen: Semiconductor module DE 102 29 712 B4; US 6,975,034 B2 |
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2001 | ||
D. Lorenzen, U. Röllig: Diode laser component DE 101 13 943 B4; US 6,754,244 B2; JP | ||
2000 | ||
M. Schröder, H. G. Hänsel, D. Lorenzen: Method for contacting a high-power diode laser bar and a high-power diode laser bar-contact arrangement of electrical contacts with minor thermal function EP 1 143 583 B1; US 6,621,839 B1 | ||
D. Lorenzen, F. Dorsch: Mounting substrate and heat sink for high-power diode laser bars DE 100 11 892 A1 (expired); US 6,535,533 B2 | ||
1999 | ||
D. Lorenzen, F. X. Daiminger: Device for cooling diode lasers DE 100 47 780 A1; US 6,480,514 B1; FR 2 800 208 B1; JP | ||
1998 | ||
D. Lorenzen, F. X. Daiminger, F. Dorsch, K. Süß: Diode laser component and method for producing the same DE 198 21 544 A1 | ||
1996 | ||
R. Dohle, S. Heinemann, F. Dorsch, F. X. Daiminger, D. Lorenzen: High-power diode laser and method for mounting the same DE 196 44 941 C1; US 7,369,589 B2; FR 2 755 308 B1 |