| 2006 |
| M. Ziegler, F. Weik, J. W. Tomm, T. Elsaesser, W. Nakwaski, R. P. Sarzala, D. Lorenzen, J. Meusel, A. Kozlowska: Transient thermal properties of high-power diode laser bars Appl. Phys. Lett. 89-263506 (2006) |
| M. Kreissl, T. Q. Tien, J. W. Tomm, D. Lorenzen, A. Kozlowska, M. Latoszek, M. Oudart, J. Nagle: Spatially-resolved and temperature dependent thermal tuning rates of high-power diode laser arrays Appl. Phys. Lett. 88-133510 (2006) |
| 2003 |
| J. W. Tomm, A. Gerhard, R.Müller, M. L. Biermann, J. P. Holland, D. Lorenzen, E. Kaulfersch: Quantitative strain analysis in AlGaAs-based devices Appl. Phys. Lett. 82 (23), 4193-4195 (2003) |
| 2002 |
| J. W. Tomm, A. Gerhard, T.Elsaesser, D. Lorenzen, P.Hennig: Simultaneous quantification of strain and defects in high-power diode laser devices Appl. Phys. Lett. 81 (17), 3269-3271 (2002) |
| 2001 |
| D. Lorenzen, J. Bonhaus, W. R. Fahrner, E. Kaulfersch, E. Wörner, P. Koidl, K. Unger, D. Müller, S. Rölke, H. Schmidt, M. Grellmann: Micro Thermal Management of High-Power Diode Laser Bars IEEE Trans. Ind. Electron. 48 (2), 286-297 (2001) |
| 1999 |
| J. W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, A. Gerhardt, J. Donecker, D. Lorenzen, F. X. Daiminger, S. Weiß, M. Hutter, E. Kaulfersch, H. Reichl: Spectroscopic measurement of packaging-induced strains in quantum-well laser diodes J. Appl. Phys. 86 (3), 1196-1201 (1999) |
| 1998 |
| J. W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, J. Donecker: Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices Appl. Phys. Lett. 73 (26), 3908-3910 (1998) |
| 1997 |
| W. R. Fahrner, J. Bonhaus, P. Heinemeyer, H. Ilgen, J. Schütze, D. Lorenzen, T. Mehlhorn: Mikrokühlsysteme für elektronische Baugruppen F&M 105, 269-272 (1997) |